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US Patent Issued to Yangtze Memory Technologies on April 7 for "Architecture and method for NAND memory operation" (Chinese Inventor)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,470, issued on April 7, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Architecture and method for NAND memory opera... Read More


US Patent Issued on April 7 for "Non-volatile memory and corresponding manufacturing method" (French Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,471, issued on April 7. "Non-volatile memory and corresponding manufacturing method" was invented by Radouane Habhab (Marseilles, France), ... Read More


US Patent Issued to Micron Technology on April 7 for "Selectively erasing one of multiple erase blocks coupled to a same string using gate induced drain leakage" (Singaporean, American, Japanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,472, issued on April 7, was assigned to Micron Technology Inc. (Boise, Idaho). "Selectively erasing one of multiple erase blocks coupled to... Read More


US Patent Issued to Sandisk Technologies on April 7 for "Multi-step read pass voltage discharge for ICC reduction" (California Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,473, issued on April 7, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Multi-step read pass voltage discharge for ICC reduc... Read More


US Patent Issued to Hosin Global Electronics on April 7 for "Reading voltage management method and storage device" (Taiwanese Inventor)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,474, issued on April 7, was assigned to Hosin Global Electronics Co. LTD (Shenzhen, China). "Reading voltage management method and storage ... Read More


US Patent Issued to Kioxia on April 7 for "Memory system, control method thereof, and program" (Japanese Inventor)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,475, issued on April 7, was assigned to Kioxia Corp. (Tokyo). "Memory system, control method thereof, and program" was invented by Yoshihis... Read More


US Patent Issued to Micron Technology on April 7 for "Program verify compensation in a memory device with a defective deck" (California Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,476, issued on April 7, was assigned to Micron Technology Inc. (Boise, Idaho). "Program verify compensation in a memory device with a defec... Read More


US Patent Issued to Yangtze Memory Technologies on April 7 for "Detection of leakage current in flash memory" (Chinese Inventor)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,477, issued on April 7, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Detection of leakage current in flash memory"... Read More


US Patent Issued to Rohm on April 7 for "Memory device" (Japanese Inventor)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,478, issued on April 7, was assigned to Rohm Co. Ltd. (Kyoto, Japan). "Memory device" was invented by Yuichi Kokusho (Kyoto, Japan). Accor... Read More


US Patent Issued to SK hynix on April 7 for "Semiconductor device" (South Korean Inventor)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,479, issued on April 7, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Semiconductor device" was invented by Young Jun Park (Iche... Read More